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APT33GF120HR
1200V 38A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
TO-258
* Low Forward Voltage Drop * Low Tail Current * Avalanche Rated * Hermetic Package
MAXIMUM RATINGS
Symbol V CES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
* High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated
C E G
C G E
All Ratings: TC = 25C unless otherwise specified.
APT33GF120HR UNIT
Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current
1
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation
2
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Y R A IN IM L E R P
1200 1200 20 38 33 76 66 65
@ TC = 25C
Volts
Amps
mJ Watts C
205
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX UNIT
1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.8 5.0
6-2000 050-5974 Rev -
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
I CES I GES
mA nA
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT33GF120HR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.8VCES I C = I C2 RG = 10W MIN TYP MAX UNIT
1850 200 110 165 20 100 30 140 150 200 28 60
ns nC pF
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
Y R A IN IM L E R P
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W
ns
280 30
3.0 3.0 6.0 28 70
TJ = +150C
mJ
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W
ns
250 25
Total Switching Losses Forward Transconductance
TJ = +25C VCE = 20V, I C = I C2
5.0 8.5
20
mJ S
THERMAL CHARACTERISTICS
Symbol RQJC RQJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.61 40
1 2
6-2000
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 119H, Tj = 25C See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
3
050-5974
Rev -

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